| 发明名称 |
SIMPLIFIED PROCESS FOR PRODUCING NANOPOROUS SILICA |
| 摘要 |
<p>The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic elements present on its surface, is provided with a relatively high porosity, low dielectric constant, silicon-containing polymer film composition.</p> |
| 申请公布号 |
WO0002233(A2) |
申请公布日期 |
2000.01.13 |
| 申请号 |
WO1999US15345 |
申请日期 |
1999.07.07 |
| 申请人 |
ALLIEDSIGNAL INC. |
发明人 |
WALLACE, STEPHEN;RODERICK, KEVIN, H.;RAMOS, TERESA;BRUNGARDT, LISA, BETH;SMITH, DOUGLAS, M.;DRAGE, JAMES;WU, HUI-JUNG;VIERNES, NEIL |
| 分类号 |
H01L21/3105;H01L21/312;H01L21/316;(IPC1-7):H01L/ |
主分类号 |
H01L21/3105 |
| 代理机构 |
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