| 发明名称 |
Spin-valve structure and method for making same |
| 摘要 |
<p>The present invention concerns a spin-valve structure comprising a first and a second free ferromagnetic layer and an antiferromagnetic layer positioned between said first and second free ferromagnetic layer, characterised in that said first free ferromagnetic layer is positioned on a semiconductor substrate. It further concerns a method for producing a spin-valve structure, comprising the step of electrodeposition of said spin-valve structure on a semiconductor substrate. <IMAGE></p> |
| 申请公布号 |
EP0971423(A1) |
申请公布日期 |
2000.01.12 |
| 申请号 |
EP19980870160 |
申请日期 |
1998.07.10 |
| 申请人 |
INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW |
发明人 |
ATTENBOROUGH, KAREN;BOEVE, HANS;DE BOECK, JOHAN |
| 分类号 |
G11B5/39;G01R33/09;G11C11/56;H01F10/08;H01F10/32;H01F41/26;H01F41/30;H01L43/08;H01L43/12;(IPC1-7):H01L43/12;G11C11/15 |
主分类号 |
G11B5/39 |
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