| 摘要 |
An ESD event detector in accordance with the present invention is implemented by an amplifier-like structure, an input device of which is constituted by a non-volatile memory transistor. The instantaneous high voltage while an ESD pulse stresses at an integrated circuit pad alters the threshold voltage of the input device. Thereafter, the DC offset of the amplifier-like device is measured to know whether or not an ESD event occurred during the phases of testing, assembly, installation, or operation.
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