| 摘要 |
PROBLEM TO BE SOLVED: To provide the substrate which enables easy discrimination between a mask layer and a GaN-based crystal layer formed on the periphery of the mask layer and has the mask layer capable of becoming an appropriate reference for various kinds of fabrication after growing the GaN-based crystal layer. SOLUTION: In this substrate, a discriminating substance capable of not transmitting light of wavelengths selected from those in the range of the ultraviolet region to the infrared region is dispersed into a mask layer 2 formed on a base substrate 1, to enable visual and optical discrimination of the mask layer 2 from a GaN-based crystal layer. As the discriminating substance, Fe, Cr, Nd, or the like, is used and the discriminability with which the mask layer 2 is provided by dispersing atoms of any of these elements into the mask layer 2, is not deteriorated even when the mask layer 2 is exposed to the conditions under which a GaN-based crystal semiconductor is grown.
|
