| 摘要 |
PROBLEM TO BE SOLVED: To enable a capacitor to be enhanced in effective area and corrected for asymmetrical characteristics by a method wherein all or a part of the surfaces of a capacitor provided with two electrodes conducive to its capacitance is arranged so as to be vertical or nearly vertical to the primary surface of a semiconductor board. SOLUTION: A dielectric body 110 is formed of lead titanate zirconate through a sputtering method and then shaped into a prescribed pattern through a photolithography method. By anisotropic etching, all the surface is etched. An ion beam where argon gas as inert gas is used as an ion source is made to impinge on a semiconductor board 101 at a right angle to etch all its surface. By this setup, a capacitor can be enhanced in capacity without increasing it in area occupied by it. The manufacturing processes for a capacitor can be lessened in number, and an interface between an electrode and a dielectric body 111 is made symmetrical in condition, whereby the capacitor can be set uniform in characteristics independently of the direction of a voltage applied to the electrode. |
