| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a growth method, wherein a good quality of gallium nitride compound semiconductor single crystal is grown on a rare-earth 13 (3B) group perovskite single-crystal substrate containing one or more kinds of rare earth elements. SOLUTION: This growth method of a gallium nitride compound semiconductor single crystal, having a rare earth 13 (3B) group perovskite single-crystal substrate containing one or more kinds of rare earth elements, contains the first film forming process in which the first gallium nitride layer is grown on the substrate under a first temperature condition, a heat treatment process wherein heat treatment is performed on the substrate by heating up to the prescribed temperature in an inert gas atmosphere, and the second film forming process, where the second gallium nitride layer is gown on the first gallium nitride layer under a second temperature condition, which is higher than the first temperature condition.</p> |
