| 摘要 |
PROBLEM TO BE SOLVED: To form a dielectric protective layer at the front surface substrate of a plasma display panel in such a manner that its density is high and a secondary electron release coefft. is high. SOLUTION: The inside of a chamber 2 is segmented by a partition plate 4 to two chambers 3a, 3b. The substrate 1 is disposed in the chamber 3a and an evaporation source 9 of MgO, etc., in the chamber 3b, respectively. The evaporation source 9 is heated and evaporated by irradiation with an electron beam EB from an electron gun 11, is passed as a vapor flow MB through the aperture 4 of the partition plate 4 and is cast to the deposition surface 1a of the substrate 1. The vapor flow reacts with the reaction gas introduced via a reaction gas introducing mechanism 16 from a reaction gas cylinder 14 simultaneously therewith, thereby depositing the dielectric protective layer of MgO. An atmosphere where this reaction gas is dominant is formed in the chamber 3a and the reaction thereof with the evaporation particles of the vapor flow MB is accelerated. In addition, the chamber 3b is sufficiently decompressed by a vacuum pump 12 and the residual gases are removed, by which the evaporation particles of the vapor flow MB is prevented from receiving the influence of the residual gases.
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