| 摘要 |
A method of fabricating cylindrical capacitors comprising the steps of forming a gate and a source/drain region on a substrate, and then forming an insulating layer over the substrate. Next, a contact opening that exposes one of the source/drain regions is formed in the insulating layer. Subsequently, a first conductive layer is deposited over the insulating layer and into the contact opening, and then the first conductive layer is patterned. Thereafter, a first deep ultra-violet photoresist layer, a hard mask layer and a second deep ultra-violet photoresist layer are sequentially formed over the substrate structure. Next, the second deep ultra-violet photoresist layer is used as a mask to pattern the hard mask layer and the first deep ultra-violet photoresist layer. Ultimately, an opening that exposes a portion of the first conductive layer is formed. Then, the second deep ultra-violet photoresist layer is removed. After that, a silicon layer is formed on the sidewalls of the opening, and then the hard mask layer and the first deep ultra-violet photoresist layer are removed to expose the insulating layer and the silicon layer. The silicon layer and the first conductive layer together serve as the lower electrode of the capacitor. Finally, a dielectric layer and then a second conductive layer are sequentially formed over the lower electrode. The second conductive layer functions as the upper electrode of the capacitor.
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