| 摘要 |
PROBLEM TO BE SOLVED: To improve the uniformity of gate dimension by providing an oxide film to flatten a substrate and form a reflection prevention film thereon. SOLUTION: A polycrystalline silicon 9 is formed by the CVD method and a liquid oxide film 12 is formed thereon to flatten the substrate, and further a nitride film 13 as a reflection prevention film is formed thereon by the CVD method. Next, a resist 11 is applied thereon. Since the uniformity of resist film is kept during mask matching and the reflection prevention film is provided, influence of stationary wave effect is not given, thereby obtaining a pattern having less variation of finishing dimension of resist. A nitride film 13, an oxide film 12 and a polycrystalline silicon 9 are dry-etched thereafter, and the nitride film 13 and oxide film 12 are removed, so that a gate pattern having less variation of dimension can be realized. |
