发明名称 Integrated circuit having a metallization level of different thicknesses
摘要 An integrated circuit having a metallization level of different thicknesses includes a track formed in a small thickness portion and an inductor formed in a large thickness portion. In a preferred device, the large thickness portion comprises a first part having a straight edge and a second part having a concave edge, the portion being formed of first and second metal layers separated by an etch stop layer. An Independent claim is given for a method for forming the metallization structure by mask etching techniques.
申请公布号 FR2780202(A1) 申请公布日期 1999.12.24
申请号 FR19980007935 申请日期 1998.06.23
申请人 STMICROELECTRONICS SA 发明人 LOUWERS STEPHAN;MARTY MICHEL
分类号 H01L21/3213;H01L21/822;H01L23/522;H01L27/04;(IPC1-7):H01L23/522 主分类号 H01L21/3213
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