发明名称 |
Integrated circuit having a metallization level of different thicknesses |
摘要 |
An integrated circuit having a metallization level of different thicknesses includes a track formed in a small thickness portion and an inductor formed in a large thickness portion. In a preferred device, the large thickness portion comprises a first part having a straight edge and a second part having a concave edge, the portion being formed of first and second metal layers separated by an etch stop layer. An Independent claim is given for a method for forming the metallization structure by mask etching techniques.
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申请公布号 |
FR2780202(A1) |
申请公布日期 |
1999.12.24 |
申请号 |
FR19980007935 |
申请日期 |
1998.06.23 |
申请人 |
STMICROELECTRONICS SA |
发明人 |
LOUWERS STEPHAN;MARTY MICHEL |
分类号 |
H01L21/3213;H01L21/822;H01L23/522;H01L27/04;(IPC1-7):H01L23/522 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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