发明名称 PLASMA PROCESSING APPARATUS
摘要 There is disclosed a plasma processing apparatus comprising: a) a chamber having a plasma containing region, the chamber having a dielectric portion; b) an antenna (6) for coupling radio frequency (RF) power into the plasma; and c) a shield member (2) which reduces the level of RF power capacitively coupled into the plasma, wherein the shield member (2) comprises a conducting portion and is positioned between the plasma and the dielectric portion. Also disclosed is a shield member, particularly one for use in the described plasma processing apparatus.
申请公布号 WO9966531(A1) 申请公布日期 1999.12.23
申请号 WO1999GB01913 申请日期 1999.06.16
申请人 SURFACE TECHNOLOGY SYSTEMS LIMITED;BHARDWAJ, JYOTI, KIRON;LEA, LESLIE, MICHAEL 发明人 BHARDWAJ, JYOTI, KIRON;LEA, LESLIE, MICHAEL
分类号 H05H1/46;B01J19/08;C23C14/34;C23F4/00;H01J37/32;H01L21/205;H01L21/302;H01L21/3065 主分类号 H05H1/46
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