There is disclosed a plasma processing apparatus comprising: a) a chamber having a plasma containing region, the chamber having a dielectric portion; b) an antenna (6) for coupling radio frequency (RF) power into the plasma; and c) a shield member (2) which reduces the level of RF power capacitively coupled into the plasma, wherein the shield member (2) comprises a conducting portion and is positioned between the plasma and the dielectric portion. Also disclosed is a shield member, particularly one for use in the described plasma processing apparatus.
申请公布号
WO9966531(A1)
申请公布日期
1999.12.23
申请号
WO1999GB01913
申请日期
1999.06.16
申请人
SURFACE TECHNOLOGY SYSTEMS LIMITED;BHARDWAJ, JYOTI, KIRON;LEA, LESLIE, MICHAEL