发明名称 |
OPEN-LOOP METHOD AND SYSTEM FOR CONTROLLING GROWTH OF SEMICONDUCTOR CRYSTAL |
摘要 |
An open-loop control method for use with an apparatus for growing a silicon single crystal having a zero dislocation state and an improved diameter and growth rate uniformity in accordance with the Czochralski process. According to the invention, a heat and mass transfer model based on the silicon charged to a crucible is determined as a function of one or more reference parameters. The reference parameter values are determined from the growth of a reference silicon single crystal. A power profile is then determined as a function of the heat and mass transfer model for a given pull rate profile and model diameter profile. The power profile generated is representative of the power supplied to a heater for providing an amount of thermal energy to the crucible for substantially maintaining a thermal equilibrium at the interface between the melt and the crystal. Finally, the crystal growing apparatus is controlled during the growth of at least a portion of the silicon single crystal by adjusting the thermal energy provided to the crucible by the heater in accordance with the power profile.
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申请公布号 |
WO9950482(B1) |
申请公布日期 |
1999.12.23 |
申请号 |
WO1999US05397 |
申请日期 |
1999.03.12 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
GROVER, SUNIL;KIMBEL, STEVEN, L. |
分类号 |
C30B29/06;C30B15/14;C30B15/20;C30B15/22;(IPC1-7):C30B15/20 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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