Method for fabricating a semiconductor device having different gate oxide layers

摘要

A method for fabricating a semiconductor device with different gate oxide layers. Oxidation is controlled in accordance with the active area dimension so that oxide grows thin at a wider active width (peripheral region) and grows thickly at a narrower active width (cell array region). A gate pattern (20-30) is formed on a semiconductor substrate having different active areas. Gate spacers are formed and then an active dimension dependant oxidation process is performed to grow oxide layers differently. <IMAGE> <IMAGE>