| 摘要 |
<p>A processing unit cuts out, from a selected mask pattern (22), a rectangular area pattern (SkxSk) having the size equal to an optical system term kernel phi 1 associated with coordinates (X, Y) on a wafer. The processing unit (1) further cuts out, from the rectangular area pattern (SkxSk), fine grid rectangular area patterns (SjxSj) having the size equal to an optical system term kernel phi 2 associated with coordinates (x, y) contained in a predetermined range from the coordinates (X, Y). The processing unit (1) discriminates the transmission factors F of the fine grid rectangular areas divided at fine grid intervals dxf, and determines whether all the transmission factors F of the fine grid rectangular areas of the mask pattern (22) are 0 or 1. When the processing unit (1) determines that all the transmission factors F of the fine grid rectangular areas are 0 or 1, the processing unit 1 performs convolution integration with respect to the kernel phi 1 corresponding to the coordinates (X, Y) and the transmission factor F of the mask pattern 22, thereby calculating the light intensity l (X, Y) at a position specified by the coordinates (X, Y) on the wafer. When the processing unit 1 does not determine that all the transmission factors F of the fine grid rectangular areas are 0 or 1, the processing unit (1) performs the convolution integration with respect to the kernel phi 2 corresponding to the coordinates (x, y) and the transmission factor F of the mask pattern 22, thereby calculating the light intensity l (x, y) at a position specified by coordinates (x, y) on the wafer. <IMAGE></p> |
