发明名称 Single ended dual port memory cell
摘要 A single ended dual port memory cell is described. A bit of data received from one of the first and second ports can be stored. Each of the first and second ports can simultaneously detect the stored bit. A method of reading the contents of a dual port memory cell which has a Beta Ratio less than 1.5 is also described. A wordline is associated with a selected port of the memory cell. The wordline is coupled to a gate device of the memory cell for controlling communication between the memory cell and a bitline. The gate device has a first conductance at a first wordline voltage and a second conductance at a second wordline voltage. The second conductance is less than the first conductance. A port of the cell is selected by applying a select voltage to the associated wordline. The select voltage is approximately the same as the second wordline voltage. The cell contents are then retrieved from the bitline.
申请公布号 US6005795(A) 申请公布日期 1999.12.21
申请号 US19970789299 申请日期 1997.01.30
申请人 CYPRESS SEMICONDUTOR CORPORATION 发明人 HAWKINS, ANDREW L.;SYWYK, STEFAN P.
分类号 H01L27/10;G11C8/16;(IPC1-7):G11C11/00 主分类号 H01L27/10
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