发明名称 |
Self-gettering electron field emitter |
摘要 |
A self-gettering electron field emitter has a first portion formed of a low-work-function material for emitting electrons, and it has an integral second portion that acts both as a low-resistance electrical conductor and as a gettering surface. The self-gettering emitter is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance gettering material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-gettering emitter is particularly suitable for use in lateral field emission devices. The preferred emitter structure has a tapered edge, with a salient portion of the low-work-function material extending a small distance beyond an edge of the gettering and low resistance material. A fabrication process specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices is also disclosed.
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申请公布号 |
US6005335(A) |
申请公布日期 |
1999.12.21 |
申请号 |
US19970990624 |
申请日期 |
1997.12.15 |
申请人 |
ADVANCED VISION TECHNOLOGIES, INC. |
发明人 |
POTTER, MICHAEL D |
分类号 |
H01J29/94;(IPC1-7):H01J1/02;H01J1/16;H01J19/10;H01J1/62 |
主分类号 |
H01J29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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