| 摘要 |
PROBLEM TO BE SOLVED: To provide a lapping carrier which can produce a silicon wafer having excellent flatness. SOLUTION: This carrier is made from a SUS material having a thickness 0-20 μm greater than that of a silicon wafer as desired after being lapped, and therefrom a carrier of the desired size is cut out by laser processing, which is subjected to pressurization, heating, mechanical polishing, and burr removal from the periphery and bore, and the bore edges are rounded by hand polishing. |
