| 摘要 |
Silicon carbide power devices are fabricated by implanting p-type dopants in to a silicon carbide substrate through an opening in a mask, to form a deep p- type implant. N-type dopants are implanted into the silicon carbide substrat es through the same opening in the mask, to form a shallow n-type implant relative to the p-type implant. Annealing is then performed at temperature a nd time that is sufficient to laterally diffuse the deep p-type implant to the surface of the silicon carbide substrate surrounding the shallow n-type implant, without vertically diffusing the p-type implant to the surface of t he silicon carbide substrate through the shallow n-type implant. Accordingly, self-aligned shallow and deep implants may be performed by ion implantation, and a well-controlled channel may be formed by the annealing that promotes significant diffusion of the p-type dopant having high diffusivity, while th e n-type dopant having low diffusivity remains relatively fixed. Thereby, a p- base may be formed around an n-type source. Lateral and vertical power MOSFE Ts may be fabricated. |
