发明名称 |
METHOD AND APPARATUS FOR FABRICATING SILICON DIOXIDE AND SILICON GLASS LAYERS IN INTEGRATED CIRCUITS |
摘要 |
A precursor liquid (64) comprising silicon in a xylene solvent is prepared, a substrate (5, 71) is placed within a vacuum deposition chamber (2), the precursor liquid is misted, and the mist (66) is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film (1224, 77) of silicon dioxide or silicon glass on the substrate. Then an integrated circuit (100) is completed to include at least a portion of the silicon dioxide or silicon glass layer as an insulator (77) for an electronic device (76) in the integrated circuit. |
申请公布号 |
WO9734320(A9) |
申请公布日期 |
1999.12.16 |
申请号 |
WO1997US04185 |
申请日期 |
1997.03.14 |
申请人 |
SYMETRIX CORPORATION;MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
MCMILLAN, LARRY, D.;SCOTT, MICHAEL, C.;PAZ DE ARAUJO, CARLOS, A.;OTSUKI, TATSUO;HAYASHI, SHINICHIRO |
分类号 |
B05D1/00;B05D3/04;B05D7/24;C23C16/44;C23C16/448;C23C16/455;C23C16/46;C23C16/48;C23C16/52;C23C18/12;C23C18/14;C23C26/02;C30B7/00;H01L21/02;H01L21/314;H01L21/316;H01L27/115;H01L41/24;H05K3/10 |
主分类号 |
B05D1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|