发明名称 Method of manufacturing bonding wire for semiconductor device
摘要 A bonding wire for semiconductor devices is manufactured by a process which includes applying a lubricant to a wire and taking measures to ensure good adhesion between the lubricant and the wire. In particular wire may be cooled to directly after final annealing at a rate of 1000{C/sec. or more. Alternatively, the wire may be withdrawn form the lubricant solution at an angle of between 50 and 60{ to the surface of the solution. In a yet further alternative the wire is given a surface removal treatment after annealing.
申请公布号 GB2300752(B) 申请公布日期 1999.12.15
申请号 GB19950009683 申请日期 1995.05.12
申请人 * TANAKA DENSHI KOGYO KABUSHIKI KAISHA 发明人 TAEKO * TOBIYAMA;HIROTO * IGA;ICHIRO * NAGAMATSU;KEIKO * ITABASHI
分类号 B21C9/00;B23K35/40;C22F1/08;C22F1/14;H01L23/49 主分类号 B21C9/00
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