Group III-V compound semiconductor wafer

摘要

A wafer (21) consisting of a group III-V compound semiconductor comprises a substrate (22) consisting of a group III-V compound whose outer peripheral edge portion is so chamfered that its section has an arcuate shape substantially with a radius R, and an epitaxial layer (26) consisting of a group III-V compound layer formed on the substrate (22). A portion of the wafer (22) separating from its outer peripheral edge by a distance L is removed, and the distance L satisfies the relation of an expression R