| 摘要 |
In a semiconductor device including a first insulating layer formed on a semiconductor substrate, a plurality of lower wiring layers made of one of aluminum and aluminum alloy and formed on the first insulating layer, a second insulating layer made of one of silicon oxide and PSG and formed on the first insulating layer, and a plurality of upper wiring layers made of one of aluminum and aluminum alloy, contact holes having a size larger than a width of the lower wiring layers are formed within the second insulating layer, and contact plugs are filled in the contact holes. Also, a conductive layer including one of Ti and W is provided between the lower wiring layers and the contact plugs. |
