摘要 |
PCT No. PCT/FR96/00530 Sec. 371 Date Oct. 6, 1997 Sec. 102(e) Date Oct. 6, 1997 PCT Filed Apr. 9, 1996 PCT Pub. No. WO96/31447 PCT Pub. Date Oct. 10, 1996Between the start and the end of the chemical vapor infiltration process, infiltration conditions are modified by causing at least one of the following infiltration parameters to vary: retention time of the gas, pressure, temperature, concentration of precursor in the gas, and concentration of dopant, if any, in the gas; thereby adapting infiltration conditions to changes in the porometry of the substrate in order to control the microstructure of the material deposited within the substrate, in particular in order to conserve a microstructure that is constant.
|
申请人 |
SOCIETE NATIONALE D'ETUDE ET DE CONSTRUCTION DE MOTEURS D'AVIATION |
发明人 |
LELUAN, JEAN-LUC;DOMBLIDES, JEAN-LUC;DELPERIER, BERNARD;THEBAULT, JACQUES;TOUSSAINT, JEAN-MARIE |