| 摘要 |
An electrically alterable nonvolatile semiconductor memory device has a first memory array including a plurality of first memory cells and a second memory array including at least one second memory cell, wherein contents of the first memory array and contents of the second memory array are capable of being altered independently of each other and variation of a specific quality of each second memory cell due to altering of the contents of the second memory cell is examined, in order to estimate the life of the first memory array. |
