| 摘要 |
In a photoelectric conversion device driven by a current mirror circuit, the current mirror circuit is constituted by four transistors, e.g., first and second PMOS transistors and first and second NMOS transistors. A photodiode which has a cathode connected to the drain of the second PMOS transistor and receives reverse bias is arranged. Electrons generated in the photodiode can prevent potential rise of a node connected to the photodiode to normally operate the photoelectric conversion device even upon irradiation of light.
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