| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a thin film transistor array having less defects at a high yield, by making the etching thickness of a silicon nitride film thinner than the thickness of an amorphous silicon film by a specific amount when the amorphous silicon film is etched to the shape of a mask pattern. SOLUTION: A thin film transistor array is manufactured by forming an amorphous silicon film on a silicon nitride film and, at the same time, the etching thickness of the silicon nitride film when the amorphous silicon film is formed on a mask pattern is made thinner than the thickness of the amorphous silicon film by 20%. To be concrete, after a source electrode 11 and a drain electrode 12 are formed by patterning, only a P-doped n-type amorphous silicon film 10 and an undoped i-type amorphous silicon film are dry-etched by using a parallel plate type dry etching device and a mixed gas containing a hydrocarbon, such as CHCl2 CF3 prepared by partially replacing hydrogen with chlorine or fluorine and SF6 as an etching gas.</p> |
