| 摘要 |
PCT No. PCT/JP95/00559 Sec. 371 Date Jun. 3, 1996 Sec. 102(e) Date Jun. 3, 1996 PCT Filed Mar. 27, 1995 PCT Pub. No. WO95/26573 PCT Pub. Date Oct. 5, 1995A method of manufacturing a semiconductor detector for detecting light and radiation comprises the steps of providing a first semiconductor substrate of a first conductivity type, attaching a second substrate to the first semiconductor substrate through an insulating film, grinding the first semiconductor substrate from a surface thereof to a predetermined thickness, forming a MOS transistor on the ground surface of the first semiconductor substrate, removing the second substrate, and forming electrodes on the first semiconductor substrate for forming a depletion layer.
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