发明名称 GALLIUM NITRIDE BASED SEMICONDUCTOR LASER ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser element, having a good laser ocsillation characteristic which is capable of being used as a light source of an optical disc system. SOLUTION: In a gallium nitride based semiconductor laser element having an activated layer 6, comprising a semiconductor nitride formed between at least clad layers 4 and 9, and/or guide layers 5 and 8, on a substrate 1, a length in a direction of a laser resonator of an ohmic electrode 11 which supplies current to the activated layer, is shorter than the length of the laser resonator.
申请公布号 JPH11340573(A) 申请公布日期 1999.12.10
申请号 JP19980146786 申请日期 1998.05.28
申请人 SHARP CORP 发明人 OKUMURA TOSHIYUKI
分类号 H01L33/06;H01L33/32;H01L33/38;H01S5/00;H01S5/042;H01S5/065;H01S5/323;H01S5/343 主分类号 H01L33/06
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