| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, with multilayer interconnections, in which the multilayer interconnections can be connected surely even when their misalignment is generated in the formation of a via hole. SOLUTION: In a manufacturing method for a semiconductor device with a multilayer interconnection, a process in which a highly-etching-resistant nitride film 105 is formed on an inter-laminated-interconnection-layer insulating film 104 is executed, and a process in which a via hole is formed between upper-layer laminated interconnections is executed. Then, the penetration of the via hole into a lower-layer laminated interconnection due to their misalignment in the formation of the via hole is prevented by the nitride film 105. |
