| 摘要 |
PROBLEM TO BE SOLVED: To provide a new photomask for exposure which avoids thinning of a gate electrode layer, especially thinning of a fine resist pattern, due to the multiple interference effect. SOLUTION: This photomask for exposure is used to form a pattern of a gate electrode layer by exposure on a semiconductor substrate where a diffused layer 2 is formed. In the design data of the photomask, an auxiliary pattern 3 to increase the width of the gate electrode 1 is uniformly added for the gate electrode 1 having a required line width. The auxiliary pattern 3 is formed regularly on the crossing points of the gate electrode side edges and the edge of the diffused layer 2. |
