| 摘要 |
PROBLEM TO BE SOLVED: To provide a low cost superlattice semiconductor light-emitting device, capable of being simply manufactured and stably and continuously operating at room temperature. SOLUTION: This device is a heterojunction pin type diode semiconductor device, having an intrinsic semiconductor i-layer 15 with a superlattice structure. The intrinsic semiconductor i-layer 15 is formed by laminating a plurality of cyclic layers formed by a barrier layer 21, a quantum well layer 22, the barrier layer 21, and an activated layer 23 in this order. Each thickness of the quantum well layer 22 and the activated layer 23 is set to that a quantization level Γ1 of the quantum well lyaer 22 is made practically equal to a quantization level L1 and Γ1 of the activated layer 23 adjacent to the quantum well layer 22. Light is emitted after the electrons existing in the quantization level Γ1 of the quantum well layer 22 is made to underge transition to a quantization level L1 and Γ1 of the activated layer 23 adjacent to the quantum well layer 22, and a quantization level Γ2 of the activated layer 23 to its quantization level Γ1. |
