HETERO JUNCTION FIELD EFFECT TRANSISTOR,申请号JP19980147927-传众专利搜索

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发明名称	HETERO JUNCTION FIELD EFFECT TRANSISTOR
摘要
申请公布号	JPH11340451(A)	申请公布日期	1999.12.10
申请号	JP19980147927	申请日期	1998.05.28
申请人	NEC CORP	发明人	ANDO YUJI
分类号	H01L29/812;H01L21/338;H01L29/778;H01L29/80;(IPC1-7):H01L29/778	主分类号	H01L29/812
代理机构		代理人
主权项
地址

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