A METHOD FOR TREATING A DEPOSITED FILM FOR RESISTIVITY REDUCTION
摘要
A method for reducing the resistivity of a copper layer on a wafer. A moisture containing seed layer of copper is formed over a layer of material on a wafer. The copper seed layer is treated by either heat or ions from a plasma to anneal out moisture thereby reducing its resistivity and improving its adhesion to the underlying layer. A moisture free copper layer is then deposited on top of the "clean" or treated copper seed layer.
申请公布号
WO9963590(A1)
申请公布日期
1999.12.09
申请号
WO1999US11272
申请日期
1999.05.21
申请人
APPLIED MATERIALS, INC.
发明人
BHAN, MOHAN, K.;CHEN, LING;ZHENG, BO;JONES, JUSTIN;GANGULI, SESHADRI;LEVINE, TIMOTHY;WILSON, SAMUEL;CHANG, MEI