Process for producing a single crystal

摘要

Silicon single crystal production involves doping the growing crystal with specified high nitrogen and low oxygen concentrations. Silicon single crystal production by the Czochralski method involves doping the growing crystal with less than 6.5 x 10<17> atoms/cm<3> oxygen and greater than 5 x 10<13> atoms/cm<3> nitrogen. An Independent claim is also included for silicon single crystal production from a silicon melt, in which the crystal is doped with nitrogen and the quotient V/G(r) is less than 1.3 x 10<-3> cm<2>/min./K at least locally in the radial direction, where V = the crystal pulling velocity and G(r) = the axial temperature gradient at the crystal/melt phase boundary.