发明名称 |
Low noise vertical bipolar transistor and method of manufacturing it |
摘要 |
A vertical bipolar transistor production process comprises epitaxy of a single crystal silicon emitter region in direct contact with the upper layer of a silicon germanium heterojunction base. Production of a vertical bipolar transistor comprises (a) forming an intrinsic collector (4) on an extrinsic collector layer buried in a semiconductor substrate (1); (b) forming a lateral insulation region (5) around the upper part of the intrinsic collector and an offset extrinsic collector well (60); (c) forming an silicon germanium heterojunction base above the intrinsic collector (4) and the lateral insulation region (5) by non-selective epitaxy of a multilayer (8) including a silicon germanium layer; and (e) forming an in-situ doped emitter by epitaxy on a window of the surface of the multilayer located above the intrinsic collector to obtain, above the window, a single crystal silicon emitter region in direct contact with the upper layer of the multilayer (8). An Independent claim is also included for a vertical bipolar transistor produced by the above process. |
申请公布号 |
EP0962966(A1) |
申请公布日期 |
1999.12.08 |
申请号 |
EP19990401337 |
申请日期 |
1999.06.03 |
申请人 |
STMICROELECTRONICS S.A.;COMMISSARIAT A L'ENERGIE ATOMIQUE;FRANCE TELECOM |
发明人 |
CHANTRE, ALAIN;MARTY, MICHEL;DUTARTRE, DIDIER;MONROY, AUGUSTIN;LAURENS, MICHEL;GUETTE, FRANCOIS |
分类号 |
H01L29/73;H01L21/331;H01L29/08;H01L29/737 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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