发明名称 |
Method for selectively doping the intrinsic collector of an epitaxial base vertical bipolar transistor |
摘要 |
<p>Selective doping of the intrinsic collector of a vertical bipolar transistor comprises high energy dopant implantation before epitaxy and lower energy and lower dose dopant implantation after epitaxy of a silicon germanium heterojunction base. Selective doping of the intrinsic collector of a vertical bipolar transistor is carried out by (a) forming the intrinsic collector (4) on an extrinsic collector layer buried in a semiconductor substrate; (b) forming a lateral insulation region (5) around the upper part of the intrinsic collector and an offset extrinsic collector well; (c) effecting a first dopant implantation in the intrinsic collector through a first implantation window above the intrinsic collector; (d) forming a silicon germanium heterojunction base above the intrinsic collector (4) and the lateral insulation region (5) by non-selective epitaxy of a silicon and silicon germanium multilayer (8); and (e) effecting a second lower energy and lower dose dopant implantation in the intrinsic collector across the multilayer in a second implantation window located within the first implantation window above the multilayer (8) and self-aligned with the emitter.</p> |
申请公布号 |
EP0962967(A1) |
申请公布日期 |
1999.12.08 |
申请号 |
EP19990401338 |
申请日期 |
1999.06.03 |
申请人 |
STMICROELECTRONICS S.A.;COMMISSARIAT A L'ENERGIE ATOMIQUE;FRANCE TELECOM |
发明人 |
MARTY, MICHEL;CHANTRE, ALAIN;SCHWARTZMANN, THIERRY |
分类号 |
H01L29/73;H01L21/265;H01L21/331;H01L29/08;H01L29/165;H01L29/737;(IPC1-7):H01L21/331 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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