发明名称 |
Method of producing semiconductor device by dicing |
摘要 |
On a back face of a silicon wafer before dicing, tapered grooves having sloped side walls are formed by anisotropic etching along with thin portions. Strain gauges are formed on each thin portion, thereby forming a sensor chip on the silicon wafer. The back face of the silicon wafer is attached to a self-adhesive seat. Thereafter, the silicon wafer is cut along the grooves by a dicing blade to divide it into each sensor chip. In dicing, the side faces of the dicing blade cut the sloped side walls of the tapered grooves. As a result, the silicon wafer is diced into individual sensor chip having no cracks and chippings.
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申请公布号 |
US5998234(A) |
申请公布日期 |
1999.12.07 |
申请号 |
US19970825456 |
申请日期 |
1997.03.28 |
申请人 |
DENSO CORPORATION |
发明人 |
MURATA, MINORU;AO, KENICHI;SUZUKI, YASUTOSHI;ISHIOU, SEIICHIRO |
分类号 |
G01P15/12;H01L21/301;H01L21/78;H01L29/06;H01L29/84;(IPC1-7):H01L21/00;H01L21/44;H01L21/48;H01L21/50 |
主分类号 |
G01P15/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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