发明名称 Method of producing semiconductor device by dicing
摘要 On a back face of a silicon wafer before dicing, tapered grooves having sloped side walls are formed by anisotropic etching along with thin portions. Strain gauges are formed on each thin portion, thereby forming a sensor chip on the silicon wafer. The back face of the silicon wafer is attached to a self-adhesive seat. Thereafter, the silicon wafer is cut along the grooves by a dicing blade to divide it into each sensor chip. In dicing, the side faces of the dicing blade cut the sloped side walls of the tapered grooves. As a result, the silicon wafer is diced into individual sensor chip having no cracks and chippings.
申请公布号 US5998234(A) 申请公布日期 1999.12.07
申请号 US19970825456 申请日期 1997.03.28
申请人 DENSO CORPORATION 发明人 MURATA, MINORU;AO, KENICHI;SUZUKI, YASUTOSHI;ISHIOU, SEIICHIRO
分类号 G01P15/12;H01L21/301;H01L21/78;H01L29/06;H01L29/84;(IPC1-7):H01L21/00;H01L21/44;H01L21/48;H01L21/50 主分类号 G01P15/12
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