| 摘要 |
In a semiconductor device manufacturing method, when an impurity is implanted into a region for forming an impurity diffused layer in a silicon substrate, or into a polysilicon layer formed on the silicon substrate, the injection of the impurity is carried out through a protective film, such as a TiN film, which contains no oxygen and which is selectively removable from silicon. Thereafter, an annealing for activating the impurity thus implanted is applied so that an impurity diffused layer is formed, and the protective film is removed. Subsequently, a refractory metal film is adhesively provided on the silicon surface of the region where the impurity diffused layer is formed, and reaction between the silicon and the refractory metal film is caused by an annealing so that a refractory metal silicide film is formed. With this arrangement, it is possible to produce a semiconductor device which has a refractory metal silicide film having a low resistance.
|
