发明名称 |
Methods of manufacturing thin film transistors and liquid crystal displays by plasma treatment of undoped amorphous silicon |
摘要 |
Plasma treatment is performed on an exposed portion of an undoped amorphous silicon layer in a thin film transistor, after etching source/drain contacts and a doped amorphous silicon layer. The plasma treatment can repair damage caused during the etching. The plasma treatment is preferably a hydrogen plasma treatment, and more preferably a helium plasma treatment. These treatments are particularly useful in repairing damage when the source/drain electrodes comprise molybdenum or molybdenum/tungsten alloy, and etching is performed by dry etching the doped amorphous silicon layer using CF4 and HCl gases.
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申请公布号 |
US5998229(A) |
申请公布日期 |
1999.12.07 |
申请号 |
US19980017202 |
申请日期 |
1998.02.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LYU, CHUN-GI;HONG, MUN-PYO;KIM, SANG-GAB |
分类号 |
H01L21/02;H01L21/285;H01L21/3213;H01L21/336;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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地址 |
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