发明名称 Silicon etching process for making microchannel plates
摘要 An element with elongated, high aspect ratio channels such as microchannel plate is fabricated by electrochemical etching of a p-type silicon element in a electrolyte to form channels extending through the element. The electrolyte may be an aqueous electrolyte. For use as a microchannel plate, the; the silicon surfaces of the channels can be converted to insulating silicon dioxide, and a dynode material with a high electron emissivity can be deposited onto the insulating surfaces of the channels. New dynode materials are also disclosed.
申请公布号 US5997713(A) 申请公布日期 1999.12.07
申请号 US19980074712 申请日期 1998.05.08
申请人 NANOSCIENCES CORPORATION 发明人 BEETZ, JR., CHARLES P.;BOERSTLER, ROBERT W.;STEINBECK, JOHN;WINN, DAVID R.
分类号 H01J9/12;B81B1/00;B81C1/00;C25F3/12;H01J9/02;H01J43/24;H01L21/3063;(IPC1-7):C25D5/34;C25D5/48;C25D9/06 主分类号 H01J9/12
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