发明名称 |
Silicon etching process for making microchannel plates |
摘要 |
An element with elongated, high aspect ratio channels such as microchannel plate is fabricated by electrochemical etching of a p-type silicon element in a electrolyte to form channels extending through the element. The electrolyte may be an aqueous electrolyte. For use as a microchannel plate, the; the silicon surfaces of the channels can be converted to insulating silicon dioxide, and a dynode material with a high electron emissivity can be deposited onto the insulating surfaces of the channels. New dynode materials are also disclosed.
|
申请公布号 |
US5997713(A) |
申请公布日期 |
1999.12.07 |
申请号 |
US19980074712 |
申请日期 |
1998.05.08 |
申请人 |
NANOSCIENCES CORPORATION |
发明人 |
BEETZ, JR., CHARLES P.;BOERSTLER, ROBERT W.;STEINBECK, JOHN;WINN, DAVID R. |
分类号 |
H01J9/12;B81B1/00;B81C1/00;C25F3/12;H01J9/02;H01J43/24;H01L21/3063;(IPC1-7):C25D5/34;C25D5/48;C25D9/06 |
主分类号 |
H01J9/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|