发明名称 |
Method and system for providing tapered shallow trench isolation structure profile |
摘要 |
A method and system for providing a shallow trench isolation structure profile on a semiconductor is disclosed. The method and system includes patterning a mask on the semiconductor substrate, etching the mask such that the mask has sloped sides, etching the semiconductor substrate to form a trench whereby the trench has tapered sides, and planarizing the semiconductor substrate to optimize the trench depth and the width of the trench opening for subsequent processes. According to the method and system disclosed herein, the present invention allows a shallow trench isolation structure profile to be formed which has tapered sides.
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申请公布号 |
US5998301(A) |
申请公布日期 |
1999.12.07 |
申请号 |
US19970993252 |
申请日期 |
1997.12.18 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PHAM, TUAN D.;HUI, ANGELA T.;SAHOTA, KASHMIR |
分类号 |
H01L21/8247;H01L21/76;H01L21/762;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/308 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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