发明名称 |
ANTIFUSE BASED ON SILICIDED POLYSILICON BIPOLAR TRANSISTOR |
摘要 |
<p>An improved antifuse which employs the base-emitter junction of a silicided single polysilicon bipolar transistor. The distance between the base metal and emitter metal is shortened and results from self aligning process steps rather than lithographic steps, resulting in a lower and better controlled programming voltage, programming energy and ON state resistance. Typically the conductive filament formed in the new antifuse is about 0.65 microns long and is formed by a voltage pulse having a relatively slow rise time (e.g. 150 microseconds), resulting in improved properties which provide advantages in circuit design and in manufacturing circuits using the new antifuse.</p> |
申请公布号 |
EP0960439(A1) |
申请公布日期 |
1999.12.01 |
申请号 |
EP19980902912 |
申请日期 |
1998.02.13 |
申请人 |
GENNUM CORPORATION |
发明人 |
CERVIN-LAWRY, ANDREW, V., C.;KENDALL, JAMES, D.;APPELMAN, PETRUS, T.;ROUBAKHA, EFIM |
分类号 |
H01L29/73;H01L21/331;H01L21/82;H01L23/525;H01L27/082;H01L27/102;(IPC1-7):H01L23/525 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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