发明名称 Active shield for generating a plasma for sputtering
摘要 The deposition system (100) in a semiconductor fabrication system provides a slotted grounded darkspace shield (130), which protects the edge portion of the target (110). It has been found that an axial slot (130) in the grounded darkspace shield can prevent eddy currents from flowing in the darkspace shield and thereby prevent RF power losses due to eddy currents that would otherwise flow in an unslotted darkspace shield due to RF power applied to an RF coil-shield (104). By preventing the RF power losses, the RF coupling efficiency of RF power applied to the RF coil-shield can also be improved. <IMAGE> <IMAGE>
申请公布号 EP0841683(A3) 申请公布日期 1999.12.01
申请号 EP19970307895 申请日期 1997.10.06
申请人 APPLIED MATERIALS, INC. 发明人 FORSTER, JOHN C.;STIMSON, BRADLEY O.;XU, ZHENG
分类号 H05H1/46;C23C14/34;H01J37/32;H01J37/34;H01L21/203;H01L21/285 主分类号 H05H1/46
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