| 发明名称 |
A METHOD OF TREATING A SEMICONDUCTOR WAFER |
| 摘要 |
<p>A semiconductor wafer is treated in a chamber by introducing into the chamber a silicon-containing gas or vapor and hydrogen peroxide in vapor form. The silicon-containing gas or vapor is reacted with the hydrogen peroxide to form a short chain, inorganic fluid polymer on the wafer, which thus forms a generally planar layer.</p> |
| 申请公布号 |
EP0731982(B1) |
申请公布日期 |
1999.12.01 |
| 申请号 |
EP19930914846 |
申请日期 |
1993.06.30 |
| 申请人 |
TRIKON EQUIPMENTS LIMITED |
发明人 |
DOBSON, CHRISTOPHER DAVID |
| 分类号 |
H01L21/316;B05D7/24;H01L21/00;H01L21/312;(IPC1-7):H01L21/316;C23C16/56 |
主分类号 |
H01L21/316 |
| 代理机构 |
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代理人 |
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| 主权项 |
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