发明名称 |
Method and circuit for the generation of programming and erasure voltage in a non-volatile memory |
摘要 |
A method for the generation of voltage for the programming or erasure of a non-volatile memory cell is disclosed. Also disclosed is a circuit and a computer readable medium which implement the method. During an operation of programming or erasure in the memory, the slope P of the write voltage ramp is adapted to the number of memory cells to be programmed or erased simultaneously during this operation. This method is particularly useful in the field of non-volatile, electrically erasable and programmable memories.
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申请公布号 |
US5995416(A) |
申请公布日期 |
1999.11.30 |
申请号 |
US19980156945 |
申请日期 |
1998.09.18 |
申请人 |
STMICROELECTRONICS S.A. |
发明人 |
NAURA, DAVID;ZINK, SEBASTIEN |
分类号 |
G11C16/12;H03K4/94;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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