| 摘要 |
PROBLEM TO BE SOLVED: To enable adaptation to fine machining at specified width by obtaining the etching condition to maximize the relative values of the peak intensities of CHF2 <+> ions with respect to the intensities of monitored various kinds of ions and optimizing the etching sectional shape near the obtained etching condition. SOLUTION: A mass spectrometer 14 is disposed near a substrate electrode to monitor various kinds of ions generated in a plasma, the etching condition is obtained so as to maximize the relative values of the peak intensities of CHF2 <+> ions with respect to the intensities of various kinds of ions, the etching sectional shape is optimized near the obtained etching condition, which is composed of a gas mix ratio, discharge power and pressure, the gas mix ratio is set so as to maximize the relative value of the peak intensities of CHF2 <+> ions, and one kind of the mixed used gases is hydrogen or carbon fluoride which contain hydrogen. As a result, this method can be adapted to fine machining of 0.3 μm or smaller width. |
