| 摘要 |
PROBLEM TO BE SOLVED: To effectively form double hetero structure at a low cost without using an epitaxial growth method. SOLUTION: This manufacturing method consists of at least a process for forming hetero structure by stacking compound semiconductor crystal (ab) composed of a periodic table group 12 (2B) element and a group 16 (6B) element, and compound semiconductor crystal (ac) which has composition different from the compound semiconductor (ab) and is composed of a periodic table group 12 (2B) element and a group 16 (6B) element, and a process wherein a substrate of hetero structure of the compound semiconductor crystal (ab) and the compound semiconductor crystal (ac) is heated, the group 12 (2B) element and the group 16 (6B) element are diffused, a region of ab(1-x) CX (0<x<1) is formed between the compound semiconductor (ab), and the compound semiconductor (ac), and double hetero structure is obtained. |
