发明名称 FAULT WIRING DETECTING CIRCUIT, SEMICONDUCTOR WAFER THERE FOR DETECTING FAULT WIRING AND FAULT WIRING DETECTING METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a fault wiring detecting circuit having high detecting precision of imperfection, a semiconductor wafer for detecting fault wiring and a fault wiring detecting method using them. SOLUTION: A fault wiring detecting circuit is formed on the surface of a semiconductor wafer for detecting fault wiring. The fault wiring detecting circuit is constituted of a wiring 16, whose capacitance with a semiconductor substrate is large and a wiring 18 the capacitance of which with the semiconductor substrate is small. Electron beam scanning is performed crossing the wirings 16, 18, the quantity of secondary electrons generated from the wirings is measured. Since the quantity of secondary electrons decreases in a short-circuiting part of both of the wirings, it can be detected.
申请公布号 JPH11330181(A) 申请公布日期 1999.11.30
申请号 JP19980132878 申请日期 1998.05.15
申请人 NEC CORP 发明人 KIKUCHI HIROMASA
分类号 H01L21/66;H01L21/3205;H01L23/52;H01L23/528;H01L23/544;(IPC1-7):H01L21/66;H01L21/320 主分类号 H01L21/66
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