| 摘要 |
PROBLEM TO BE SOLVED: To ensure an overlap margin for a side wall and the topmost layer of an interlayer insulating film by providing an insulating film layer having an etching selective ratio different from that of an oxide film which forms the side wall on the circumference wall of a contact hole on the topmost layer of the interlayer insulating film on the semiconductor substrate. SOLUTION: At the time of forming a side wall 12-b, when over etching is sufficiently performed to prevent a contact removal failure, an insulating layer film having an etching selective ratio different from that of the side wall 12-b prevents reduction of the topmost layer 8 of the interlayer insulating film. Reduction of an overlap margin 17 for the topmost layer 8 of the interlayer insulating film and the side wall top edge part, which is due to retreat of the side wall to part due to over etching, can be easily prevented by adjusting the film thickness of the insulating film layer as the etching stopper. As a result, enough overlap margin 17 for the side wall of the contact and the topmost layer of the interlayer insulating film can be ensured. |
