发明名称 |
Method of fabricating an abrupt hetero interface by organometallic vapor phase growth |
摘要 |
A method of fabricating an abrupt hetero interface by organometallic vapor growth comprises supplying a first Group III source gas at a predetermined flow rate and a first Group V source gas at a predetermined flow rate to a growth chamber during a first growth process to form a first Group III-Group V compound layer. During a growth interruption process, the inflow of the first Group III source gas to the growth chamber is stopped, while the supply of the first Group V source gas to the growth chamber is continued, to thereby interrupt the growth of the first Group III-Group V compound layer. Finally, during a second growth process, the first Group V source gas flowing into the growth chamber is switched to a second Group V source gas, and a second Group III source gas is simultaneously supplied at a predetermined flow rate to the growth chamber, thereby forming a second Group III-Group V compound layer on the first Group III-Group V compound layer.
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申请公布号 |
US5994158(A) |
申请公布日期 |
1999.11.30 |
申请号 |
US19970788374 |
申请日期 |
1997.01.24 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
KASHIMA, YASUMASA;MUNAKATA, TSUTOMU |
分类号 |
C23C16/52;C23C16/54;C30B25/02;H01L21/20;H01L21/205;H01L29/201;(IPC1-7):H01L21/20 |
主分类号 |
C23C16/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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